收藏本站
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
8V
7V
6.5 V
400
175 C
-55 C
100
10V
6.0 V
100
o
o
25 C
5.5 V
V GS = 5V
10
o
2. T C = 25 C
10
6
0.1
*Notes:
1. 250 μ s Pulse Test
o
1
V DS ,Drain-Source Voltage[V]
5
1
2
*Notes:
1. V DS = 20V
2. 250 μ s Pulse Test
4 6
V GS ,Gate-Source Voltage[V]
8
175 C
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
10
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
300
100
o
25 C
6
4
V GS = 10V
o
2
V GS = 20V
10
*Notes:
*Note: T J = 25 C
0
0
100 200 300
o
400
2
0.0
1. V GS = 0V
2. 250 μ s Pulse Test
0.5 1.0
1.4
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
16000
14000
12000
10000
8000
6000
4000
2000
C iss
C oss
C rss
Ciss = Cgs + Cgd ( Cds = shorted )
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. V GS = 0V
2. f = 1MHz
10
8
6
4
2
V DS = 20V
V DS = 50V
V DS = 80V
0
0.1
1 10
30
0
0
30
*Note: I D = 75A
60 90 120 150
180
V DS , Drain-Source Voltage [V]
Q g , Total Gate Charge [nC]
?2008 Fairchild Semiconductor Corporation
FDB047N10 Rev. C2
3
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDB075N15A MOSFET N-CH 150V 130A D2PAK
FDB082N15A MOSFET N CH 150V 105A D2PAK
FDB088N08 MOSFET N-CH 75V 75A D2PAK
FDB110N15A MOSFET N-CH 150V 92A D2PAK
FDB120N10 MOSFET N-CH 100V 74A D2PAK
FDB12N50FTM_WS MOSFET N-CH 500V 11.5A D2PAK
FDB12N50TM MOSFET N-CH 500V 11.5A D2PAK
FDB12N50UTM_WS MOSFET N-CH 500V 10A D2PAK
相关代理商/技术参数
FDB047N10_12 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 164A, 4.7mW
FDB047N10-CUT TAPE 制造商:FAIRCHILD 功能描述:FDB047N10 Series 100 V 4.7 mOhms N-Channel PowerTrench Mosfet - D2PAK-3
FDB050AN06A0 功能描述:MOSFET 60V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB050AN06A0_SN00269 制造商:Fairchild Semiconductor Corporation 功能描述:60V,80A,5MOHM,D2PAK
FDB060AN08A0 功能描述:MOSFET Discrete Auto N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB070AN06_F085 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 80A, 7m??
FDB070AN06A0 功能描述:MOSFET N-Channel PT 6V 8A 7mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB070AN06A0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET